A. L. Nikolaev

THE INFLUENCE OF 2 AT.% Si ADDITION ON THE ANNEALING OF RADIATION-INDUCED DEFECTS IN THE Fe-13Cr ALLOY

The paper presents data on electrical resistivity recovery in the Fe-13.4Cr and Fe13.6Cr-1.9Si alloys during isochronal annealing after 5 MeV electron irradiation below 77 K. Long-range migration of radiation-induced defects starts slightly above 200 K in Fe-13.4Cr. The silicon addition in Fe13.6Cr-1.9Si leads to immobilization of Frenkel pair defects thus making the peaks of the stages of the onset of long-range migration shift towards high temperatures up to 370 K and 420 K for self-interstitial atoms and vacancies, respectively. This finding confirms the data obtained earlier for Fe16Cr-Si alloys by means of positron annihilation technique (JNM 508(2018) 100-106) on trapping of radiation-induced defects on Si agglomerates (clusters consisting of several silicon atoms) formed during defect migration.

Acknowledgment: The research was carried out under the state assignment from the Ministry of Science and Higher Education of the Russian Federation (theme Function, No. AAAA-A19-119012990095-0). The author thanks Dr. D.A. Perminov for critically reading the manuscript.

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