V. B. Vykhodets, T. E. Kurennykh

DIFFUSION OF DEUTERIUM IN THE InSb SEMICONDUCTOR AT LIQUID NITROGEN TEMPERATURE

The online nuclear reaction technique is used to measure the deuterium diffusion coefficient in the InSb semiconductor at liquid nitrogen temperatures. It has been found that diffusion follows the classical mechanism of over-barrier atomic jumps. Diffusion activation energy is evaluated to be very low, approximately 0.1 eV; this correlates with the low atomic packing factor of the InSb crystal lattice, which is approximately 34%. These are the first experimental data on hydrogen diffusion in a semiconductor at cryogenic temperature and in a solid with an extremely low atomic packing factor.

Acknowledgment: The work was performed under the state assignment of the Russian Ministry of Science and Higher Education for the IMP UB RAS. We express our gratitude to Dr. O. A. Nefedova for her as-sistance.

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    Article reference

    Vykhodets V. B., Kurennykh T. E. Diffusion of Deuterium in the Insb Semiconductor at Liquid Nitrogen Temperature // Diagnostics, Resource and Mechanics of materials and structures. - 2025. - Iss. 5. - P. 29-38. -
    DOI: 10.17804/2410-9908.2025.5.029-038. -
    URL: http://eng.dream-journal.org/issues/2025-5/2025-5_530.html
    (accessed: 04/22/2026).